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| FII 50-12E NPT3 IGBT phaseleg in ISOPLUS i4-PACTM IC25 = 50 A = 1200 V VCES VCE(sat) typ. = 2.0 V 3 5 4 1 1 5 2 IGBTs Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25C TC = 90C VGE = 15 V; RG = 39 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = 900V; VGE = 15 V; RG = 39 ; TVJ = 125C non-repetitive TC = 25C Conditions TVJ = 25C to 150C Maximum Ratings 1200 20 50 32 50 VCES 10 200 V V A A A s W Features * NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits * HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current * ISOPLUS i4-PACTM package - isolated back surface - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - UL registered, E 72873 Applications * single phaseleg - buck-boost chopper * H bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier * three phase bridge - AC drives - controlled rectifier Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.0 2.3 4.5 0.4 200 85 50 440 50 4.6 2.2 2 250 1.2 2.6 6.5 0.4 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.6 K/W K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJH IC = 30 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 30 A VGE = 15 V; RG = 39 VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 30 A with heatsink compound (c) 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-4 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 320 FII 50-12E Diodes Symbol IF25 IF90 Conditions TC = 25C TC = 90C Maximum Ratings 48 25 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM t rr Erec(off) RthJC RthJS Component Symbol TVJ Tstg VISOL FC Symbol dS,dA dS,dA Weight Conditions IF = 30 A; TVJ = 25C TVJ = 125C IF = 30 A; diF/dt = -1100 A/s; TVJ = 125C VR = 600 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.4 1.8 51 180 1.8 1.6 2.8 V V A ns mJ 1.3 K/W K/W IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 0.95 V; R0 = 45 m Diode (typ. at TJ = 125C) V0 = 1.26V; R0 = 15 m Thermal Response Conditions Maximum Ratings -55...+150 -55...+125 C C V~ N IGBT Cth1 = 0.067 J/K; Rth1 = 0.108 K/W Cth2 = 0.175 J/K; Rth2 = 0.491 K/W Diode Cth1 = 0.039 J/K; Rth1 = 0.337 K/W Cth2 = 0.090 J/K; Rth2 = 0.963 K/W IISOL 1 mA; 50/60 Hz mounting force with clip Conditions pin - pin pin - backside metal 2500 20...120 Characteristic Values min. typ. max. 1.7 5.5 9 mm mm g Dimensions in mm (1 mm = 0.0394") (c) 2003 IXYS All rights reserved 2-4 320 FII 50-12E 120 A VGE = 17 V 15 V 13 V 100 IC IC 120 A 100 80 60 VGE = 17 V 15 V 80 60 13 V 11 V 11 V 40 20 0 0 1 2 3 4 VCE 9V TVJ = 25C 40 20 0 9V TVJ = 125C 5 6V7 0 1 2 3 4 5 VCE 6V7 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 120 A VCE = 20 V 100 IC IF 90 A 75 60 45 TVJ = 125C TVJ = 25C 80 60 40 TVJ = 125C 30 15 TVJ = 25C 20 0 4 6 8 10 12 VGE 0 14 V 16 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 20 V 10 K/W ZthJC 1 IGBT diode 15 VGE 0.1 10 0.01 5 VCE = 600 V IC = 35 A single pulse 0.001 0.0001 0.001 MUBW3512E7 0 0 40 80 120 160nC QG 200 0.01 0.1 t 1 s 10 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. transient thermal impedance 320 (c) 2003 IXYS All rights reserved 3-4 FII 50-12E 20 mJ td(on) 100 ns 90 80 70 t Eoff 60 V CE = 600 V V GE = 15 V RG = 39 T VJ = 125C 6 mJ V CE = 600 V V GE = 15 V RG = 39 T VJ = 125C Eoff 1200 ns 1000 800 t 600 16 Eon 4 12 8 4 0 0 20 tr Eon Erec(off) 50 40 30 20 10 0 2 td(off) 400 200 0 0 20 40 IC 60 A tf 40 IC 60 A 80 0 80 Fig. 7 8 mJ Eon Typ. turn on energy and switching times versus collector current 160 Fig. 8 4 mJ t Eoff Typ. turn off energy and switching times versus collector current V CE = 600 V V GE = 15 V IC = 35 A TVJ = 125C 800 ns 600 t 6 V CE = 600 V V GE = 15 V IC = 35 A T VJ = 125C Eon ns 120 td(on) 3 Eoff 80 4 tr Erec(off) 2 td(off) 400 2 40 1 tf 200 0 10 20 30 40 50 60 RG 70 80 0 0 10 20 30 40 50 RG 60 70 80 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor 70 350 12 60 TVJ = 125C IF = 30 A VR = 600 V RG= IRM 300 10 TVJ = 125C VR = 600 V 75 RG= 24 56 39 15 70A 50 250 8 trr [ns] 200 t RR 50A 35A 40 I RM [A] Qrr [C] 6 IF = 4 15A 30 150 20 100 7,5A 10 50 2 0 0 200 400 600 800 1000 1200 1400 1600 -di F /dt [A/s] 0 1800 0 0 200 400 600 800 1000 -diF /dt [A/s] 1200 1400 1600 1800 Fig. 11 Typ. turn off characteristics of free wheeling diode Fig. 12 Typ. turn off characteristics of free wheeling diode 320 (c) 2003 IXYS All rights reserved 4-4 |
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